KTC5242 - Inchange Semiconductor

KTC5242 Silicon NPN Power Transistors

·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type KTA1962 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIM.

Features

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 230V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 7A; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 200 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 30 MHz  hFE-1 Classifications R O 55-110 80-160 Notice： I.