KTC4527 - KEC

KTC4527 NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage T.

Features

ector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO Cob fT TEST CONDITION VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE=ᴬ IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.2A Turn On Time ton Switching Time Storage Time tstg Fall Time tf Note :.