·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT.
wn Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 4V hFE-2 DC Current Gain IC= 1.5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 0.3A; VCE= 12V KTC4419 MIN TYP. MAX UNIT 400 V 0.5 V 1.0 V 0.1 mA 0.1 mA 20 10 40 20 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification..
SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTC4468 |
KEC |
TRIPLE DIFFUSED NPN TRANSISTOR | |
2 | KTC4021 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
3 | KTC4072E |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
4 | KTC4072V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KTC4074V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | KTC4075 |
Kexin |
NPN Transistors | |
7 | KTC4075 |
HOTTECH |
NPN TRANSISTOR | |
8 | KTC4075 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KTC4075 |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
10 | KTC4075 |
Galaxy Semi-Conductor |
NPN Silicon Epitaxial Planar Transistor | |
11 | KTC4075 |
Jin Yu Semiconductor |
TRANSISTOR | |
12 | KTC4075-BL |
MCC |
NPN Plastic-Encapsulate Transistors |