DIP Type Transistors ■ Features ● High Transition Frequency ● Complementary to KTA1659A 15.87 ±0.20 3.30 ±0.20 NPN Transistors KTC4370A TO-220F ±0.20 φ3.18±0.20 ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Volt.
● High Transition Frequency
● Complementary to KTA1659A
15.87 ±0.20 3.30 ±0.20
NPN Transistors KTC4370A
TO-220F
±0.20
φ3.18±0.20
±0.20
2.54 ±0.20
Unit: mm 0.70 ±0.20
6.68 ±0.20
12.42 ±0.20
1.47max
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Tc = 25℃
Symbol VCBO VCEO VEBO IC IB PC TJ Tstg
2.54typ 2.54typ
Rating 180 180 5 1.5 0.15 20 150
-55 to 150
■ Electrical Characteristics Ta = 25℃
.
SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transit.
·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTC4370 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
2 | KTC4370 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
3 | KTC4372 |
Kexin |
Triple Diffused NPN Transistor | |
4 | KTC4372 |
Jin Yu Semiconductor |
TRANSISTOR | |
5 | KTC4372 |
GME |
Triple Diffused NPN Transistor | |
6 | KTC4372 |
HOTTECH |
GENERAL PURPOSE TRANSISTOR | |
7 | KTC4372 |
KEC |
TRIPLE DIFFUSED NPN TRANSISTOR | |
8 | KTC4373 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KTC4373 |
Kexin |
Epitaxial Planar NPN Transistor | |
10 | KTC4373 |
MCC |
NPN Plastic-Encapsulate Transistors | |
11 | KTC4373 |
Jin Yu Semiconductor |
TRANSISTOR | |
12 | KTC4374 |
Jin Yu Semiconductor |
TRANSISTOR |