KTC3875GR-G - Comchip

KTC3875GR-G General Purpose Transistor

General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.079(2.00) 0.071(1.80) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base.

Features

- High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.079(2.00) 0.071(1.80) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RθJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 .