KTC2025L - KEC

KTC2025L EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTC2025D/L EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTA1045D/L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emit.

Features

High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTA1045D/L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC ICP Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING 120 120 5 1 2 1.0 8 150 -55 150 UNIT V V V A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_.