KTA1709 - KEC

KTA1709 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power.

Features

hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -35 -20 -8 -5 -0.5 1.5 150 -55 150 UNIT V V V A A W KTA1709 EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8.