KTA1659 - Inchange Semiconductor

KTA1659 Silicon PNP Power Transistors

·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type KTC4370 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Volta.

Features

ter On Voltage IC= -500mA; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -100mA; VCE= -5V  hFE Classifications O Y 70-140 120-240 KTA1659 MIN TYP. MAX UNIT -160 V -1.5 V -1.0 V -1.0 μA -1.0 μA 70 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The prod.