KTA1572 - KEC

KTA1572 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation. B KTA1572 www.DataSheet4U.com EPITAXIAL PLANAR PNP TRANSISTOR D DIM A B C D E F G H J K L M H N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.

Features

ter Breakdown Voltage
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* Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current ) TEST CONDITION IC=-100 A IC=-1mA IE=-100 A VCB=-80V, IE=0A VEB=-4V, IC=0A VCES=-80V, VBE=0V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-1A, IB=-100mA VCE=-5V, IC=-1A VCE=-5V, IC=-1mA VCE=-5V, IC=-250mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz MIN. -120 -100 -5 150 150 150 125 100 TYP. 17 MAX. -100 -100 -100 -0.12 -0.18 -0.32 -1.1 -1.0 450 MHz pF V V V UNIT V V V nA nA nA SYMBOL V(BR)CBO V(BR)CEO.