KTA1038 - KEC

KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Cur.

Features

ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE IB PC Tj Tstg RATING -100 -100 -5 -5 5 -0.5 40 150 -55ᴕ150 UNIT V V V A A A W ᴱ ᴱ H E Q KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SIN.