KSR2101 KSR2101 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR1101 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking R1 B R2 C R5 1 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25.
ltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -10mA IC= -10mA, IB= -0.5mA VCE= -5mA, IC= -10V VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20mA 3.2 0.9 4.7 1 -0.5 -3 6.2 1.1 250 5.5 20 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSR2101 Typical Characteristics 1000 -100 VCE = - 5V R1 = 4.7 K R2 = 4.7 K VCE =- 0.3V R1 = 4.7 K R2 = 4.7 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN -10 100 -1 10 -1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSR2102 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
2 | KSR2103 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
3 | KSR2103 |
Fairchild Semiconductor |
Switching Application | |
4 | KSR2104 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
5 | KSR2104 |
Fairchild Semiconductor |
Switching Application | |
6 | KSR2105 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
7 | KSR2106 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
8 | KSR2107 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
9 | KSR2108 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
10 | KSR2109 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
11 | KSR2110 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
12 | KSR2111 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |