KSR1201 KSR1201 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR2201 1 TO-92S 1.Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise not.
e Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=5mA, IC=10V VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=20mA 3.2 0.9 4.7 1.0 0.5 3 6.2 1.1 250 3.7 20 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR1201 Typical Characteristics 1000 100 VCE = 5V R1 = 4.7K R2 = 4.7K VCE =0.3V R1 = 4.7K R2 = 4.7K VI(on)[V], INPUT VOLTAGE 1 10 100 1000 hFE, DC CURRENT GAIN 10 100 1 10 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSR1202 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
2 | KSR1203 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
3 | KSR1204 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
4 | KSR1205 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
5 | KSR1206 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
6 | KSR1207 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
7 | KSR1208 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
8 | KSR1209 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSR1210 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
10 | KSR1211 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
11 | KSR1212 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
12 | KSR1213 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) |