KSR1007 KSR1007 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to KSR2007 1 TO-92 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise not.
ut Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA 15 0.42 22 0.47 0.4 2.5 29 0.52 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR1007 Typical Characteristics 1000 VCE = 5V R1 = 22K R2 = 47K 100 VCE = 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 10 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSR1001 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
2 | KSR1001 |
Fairchild Semiconductor |
Switching Application | |
3 | KSR1002 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
4 | KSR1002 |
Fairchild Semiconductor |
Switching Application | |
5 | KSR1003 |
Samsung semiconductor |
NPN (SWITCHING APPLICATIONS) | |
6 | KSR1003 |
Fairchild Semiconductor |
Switching Application | |
7 | KSR1004 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
8 | KSR1004 |
BLUE ROCKET ELECTRONICS |
SILICON NPN DIGITAL TRANSISTOR | |
9 | KSR1004 |
Fairchild Semiconductor |
Switching Application | |
10 | KSR1005 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) | |
11 | KSR1005 |
Fairchild Semiconductor |
Switching Application | |
12 | KSR1006 |
Samsung semiconductor |
NPN (SWITCHING APPLICATION) |