KSE13009F - Fairchild Semiconductor

KSE13009F NPN Silicon Transistor

KSE13009F KSE13009F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage E.

Features

CE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time
* Pulse Test: PW≤300µs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13009F Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 V BE(sat) 10 0.1 VCE (sat) 1 0.1 1 .