·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type KSB1151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.2A VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 1V hFE-2 DC Current Gain IC= 2A; VCE= 1V hFE-3 DC Current Gain IC= 5A; VCE= 1V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A, IB1= -IB2= 0.2A; RL= 5Ω; VCC= 10V hFE-2 Classifications O Y G 100-200 160-320 200-400 KSD1691 MIN TYP. MAX UNIT 0.3 V 1.2 V 10 μA 10 μA 60 .
KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD1692 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor | |
2 | KSD1692 |
JCST |
NPN Transistor | |
3 | KSD1692 |
INCHANGE |
NPN Transistor | |
4 | KSD1616 |
Samsung semiconductor |
NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING) | |
5 | KSD1616 |
Fairchild Semiconductor |
Audio Frequency Power Amplifier & Medium Speed Switching | |
6 | KSD1616 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | KSD1616-G |
MCC |
NPN Silicon Epitaxial Transistors | |
8 | KSD1616-L |
MCC |
NPN Silicon Epitaxial Transistors | |
9 | KSD1616-Y |
MCC |
NPN Silicon Epitaxial Transistors | |
10 | KSD1616A |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSD1616A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
12 | KSD1616A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |