KSC5024 - Inchange Semiconductor

KSC5024 Silicon NPN Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base V.

Features

ITIONS IC= 3.5A ;IB1= -IB2= 1.4A; L= 500μH,Clamped IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.8A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0; VCB= 10V; ftest= 1MHz IC= 0.8A ; VCE= 10V Switc.