KSC1815 - ON Semiconductor

KSC1815 NPN Epitaxial Silicon Transistor

98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in.

Features

• Audio Frequency Amplifier and High−Frequency OSC
• Complement to KSA1015
• Collector−Base Voltage: VCBO = 50 V
• This is a Pb−Free Device MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 60 V VCEO Collector−Emitter Voltage 50 V VEBO Emitter−Base Voltage 5 V IC Collector Current 150 mA IB Base Current 50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are ex.