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SMD Type Transistors NPN Transistors KRC231S ~ KRC235S ■ Features ● With Built-in Bias Resistors. ● Simplify Circuit Design. B R1 C +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage C.
● With Built-in Bias Resistors.
● Simplify Circuit Design.
B
R1
C
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.6 -0.1
0.55 0.4
Unit: mm 0.15 +0.02
-0.02
+0.21.1 -0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
E
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Rating 30 15 5 600 200 150
-55 to 150
Unit
V
mA mW ℃
0-0.1 +0.10.68
-0.1
1. Base 2. Emitter 3. Collector
■ El.
KRC235S - KEC
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KRC235 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 2 | KRC235M |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 3 | KRC235M |
KEC |
SEMICONDUCTOR MARKING SPECIFICATION |
|
| 4 | KRC231 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 5 | KRC231M |
Korea Electronics |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 6 | KRC231S |
Kexin |
NPN Transistors |
|
| 7 | KRC231S |
BLUE ROCKET ELECTRONICS |
SILICON NPN DIGITAL TRANSISTOR |
|
| 8 | KRC231S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 9 | KRC232 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 10 | KRC232M |
Korea Electronics |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 11 | KRC232S |
Kexin |
NPN Transistors |
|
| 12 | KRC232S |
Korea Electronics |
(KRC231S - KRC233S) EPITAXIAL PLANAR NPN TRANSISTOR |
|