SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E J K D KRC110M~KRC114M EPITAXIAL PLANAR PNP TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. .
ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E J K D KRC110M~KRC114M EPITAXIAL PLANAR PNP TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KRC113 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
2 | KRC113S |
Kexin |
NPN Transistors | |
3 | KRC113S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR | |
4 | KRC110 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KRC110M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR | |
6 | KRC110S |
Kexin |
NPN Transistors | |
7 | KRC110S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR | |
8 | KRC111 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KRC111M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR | |
10 | KRC111S |
Kexin |
NPN Transistors | |
11 | KRC111S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR | |
12 | KRC112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |