SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=50mA, IB=5mA. Complementary to the KN3906S. Suffix U : Qualified to AEC-Q101. ex) KN3904S-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collecto.
Low Leakage Current : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=50mA, IB=5mA. Complementary to the KN3906S. Suffix U : Qualified to AEC-Q101. ex) KN3904S-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IB PC
* Tj
60 40 6 200 50 350 150
Storage Temperature Range
Tstg -55 150
Note :
* Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V mA mA mW
KN3904S
EPITAXIAL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KN3904 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
2 | KN3903 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
3 | KN3903S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
4 | KN3905 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KN3905S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | KN3906 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
7 | KN3906S |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
8 | KN360A2000V |
PST |
REVERSE CONDUCTING THYRISTORS | |
9 | KN1A01FU |
Kexin |
PNP Transistors | |
10 | KN2222 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
11 | KN2222A |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
12 | KN2222AS |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |