KN2907S - KEC

KN2907S EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltag.

Features

Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25 ) PC PC
* 150 mW 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note :
* Package Mounted On 99.5% Alumina 10 8 0.6 ) KN2907S/AS EPITAXI.