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The Samsung KMM464S1724T1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S1724T1 consists of eight CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy www.DataSheet4U.com substrate. Three 0.1uF decoupling capacitors are mounted on the.
mory system applications.
FEATURE
• Performance range Part No. KMM464S1724T1-FH KMM464S1724T1-FL
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• Max Freq. (Speed) 100MHz (10ns @ CL=2) 100MHz (10ns @ CL=3)
Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil), doubl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KMM464S3323BN |
Samsung Semiconductor |
144pin SDRAM SODIMM |
|
| 2 | KMM464S424CT1 |
Samsung Semiconductor |
PC100 144pin SDRAM SODIMM |
|
| 3 | KMM464S924T1 |
Samsung Semiconductor |
PC100 144pin SDRAM SODIMM |
|
| 4 | KMM466F203CS2-L |
Samsung Semiconductor |
2M X 64 SODIMM |
|
| 5 | KMM466F213CS2-L |
Samsung Semiconductor |
2M X 64 SODIMM |
|
| 6 | KMM466F404BS2-L |
Samsung Semiconductor |
4M X 64 DRAM SODIMM |
|
| 7 | KMM466F404CS2-L |
Samsung Semiconductor |
4M X 64 DRAM SODIMM |
|
| 8 | KMM466F804BS1-L |
Samsung Semiconductor |
8M X 64 DRAM SODIMM |
|
| 9 | KMM466F804CS1-L |
Samsung Semiconductor |
8M X 64 DRAM SODIMM |
|
| 10 | KMM466S1723T2 |
Samsung Semiconductor |
144pin SDRAM SODIMM |
|
| 11 | KMM466S1723T3 |
Samsung Semiconductor |
144pin SDRAM SODIMM |
|
| 12 | KMM466S1724T2 |
Samsung Semiconductor |
144pin SDRAM SODIMM |
|