The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S403CTL consists of sixteen CMOS 2M x 8 bit Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in paralle.
he printed circuit board in parallel for each SDRAM. The KMM366S403CTL is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE
• Performance range Part No. KMM366S403CTL-G0
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• Max Freq. (Speed) 100MHz (10ns @ CL=3)
Burst mode operation Auto &.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMM366S1623AT |
Samsung |
16M x 64 SDRAM DIMM | |
2 | KMM366S1623BT |
Samsung |
PC100 SDRAM MODULE | |
3 | KMM366S1623BTL |
Samsung |
PC66 SDRAM Module | |
4 | KMM366S1623CT |
Samsung |
PC100 SDRAM MODULE Preliminary | |
5 | KMM366S1623CTY |
Samsung |
PC100 SDRAM Module | |
6 | KMM366S1623DTL |
Samsung |
PC66 Unbuffered DIMM | |
7 | KMM366S163BT |
Samsung |
PC100 SDRAM MODULE | |
8 | KMM366S823AT |
Samsung Semiconductor |
SDRAM DIMM | |
9 | KMM366S823CT |
Samsung Semiconductor |
PC100 Unbuffered DIMM | |
10 | KMM366S823CTF |
Samsung Semiconductor |
Unbuffered DIMM | |
11 | KMM366S823CTL |
Samsung Semiconductor |
Unbuffered DIMM | |
12 | KMM366S823CTS |
Samsung Semiconductor |
Unbuffered DIMM |