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The Samsung KMM366F40(1)0CK1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(1)0CK1 consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
• Part Identification - KMM366F400CK1 (4096 cycles/64ms Ref. SOJ) - KMM366F410CK1 (2048 cycles/32ms Ref. SOJ)
• New JEDEC standard proposal without buffer
• Serial Presence Detect with EEPROM
• Extended Data Out Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• LVTTL compatible inputs and outputs
• Single +3.3V±0.3V power supply
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
90ns 110ns
tHPC
25ns 30ns
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KMM366F400CK |
Samsung Semiconductor |
(KMM366F400CK/410CK) DRAM Module |
|
| 2 | KMM366F410CK |
Samsung Semiconductor |
(KMM366F400CK/410CK) DRAM Module |
|
| 3 | KMM366F410CK1 |
Samsung Semiconductor |
(KMM366F400CK1/410CK1) DRAM Module |
|
| 4 | KMM366F803CK2 |
Samsung Semiconductor |
(KMM366F80(8)3CK2) DRAM Module |
|
| 5 | KMM366F804CS1 |
Samsung Semiconductor |
DRAM Module |
|
| 6 | KMM366F808CK2 |
Samsung Semiconductor |
DRAM Module |
|
| 7 | KMM366F808CS1 |
Samsung Semiconductor |
(KMM366F804(8)CS1) DRAM Module |
|
| 8 | KMM366F883CK2 |
Samsung Semiconductor |
(KMM366F883(8)CK2) DRAM Module |
|
| 9 | KMM366F888CK2 |
Samsung Semiconductor |
(KMM366F883(8)CK2) DRAM Module |
|
| 10 | KMM366S1623AT |
Samsung |
16M x 64 SDRAM DIMM |
|
| 11 | KMM366S1623BT |
Samsung |
PC100 SDRAM MODULE |
|
| 12 | KMM366S1623BTL |
Samsung |
PC66 SDRAM Module |
|