KIC7S08FU - KEC

KIC7S08FU 2-INPUT AND GATE

SEMICONDUCTOR TECHNICAL DATA 2-INPUT AND GATE The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunit.

Features

High Speed : tpd=7ns(Typ.) at VCC=5V. Low Power Dissipation : ICC=1 A(Max.) at Ta=25 . High Noise Immunity : VNIH=VNIL=28% VCC(Min.). Output Drive Capability : 5 LSTTL Loads. Symmetrical Output Impedance : | IOH | =IOL=2mA(Min.) Balanced Propagation Delays : tpLH tpHL Wide Operating Voltage Range : VCC(opr)=2 6V. A A1 CC H KIC7S08FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B B1 1 5 DIM MILLIMETERS A 2.00+_ 0.20 2 A1 1.3+_ 0.1 B 2.1+_ 0.1 3 4D B1 1.25+_ 0.1 C 0.65 D 0.2+0.10/-0.05 G 0-0.1 H 0.9 +_ 0.1 T 0.15+0.1/-0.05 T G USV MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC.