KDR720E - KEC

KDR720E SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR TECHNICAL DATA For high speed switching circuit. For small current rectification. FEATURES Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Average Forward Current IO Forword Surge Current IFSM Power Dissipation PD Junction Temperature Tj Storage .

Features

Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Average Forward Current IO Forword Surge Current IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg
* Mounted on a glass epoxy circuit board of 20 pad dimension of 4 RATING 30 200 1 150
* 125 -40 125 UNIT V mA A mW CATHODE MARK B A GG KDR720E SCHOTTKY BARRIER TYPE DIODE CE 1 2 D 1. ANODE 2. CATHODE F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 E.