KC856S - Guangdong Kexin Industrial

KC856S PNP General Purpose Double Transistor

www.DataSheet4U.com SMD Type Transistors PNP General Purpose Double Transistor KC856S(BC856S) SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 Features Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Ma.

Features

Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA Rating -80 -65 -5 -100 200 416 -65 to +150 Unit V V V mA mW /W TJ, Tstg Electrical Characteristics Ta = 25 Paramet.