SMD Type NPN Silicon AF Transistors KC817W www.DataSheet4U.com Transistors Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current.
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 250 150 -65 to +150 Unit V V V mA A mA mW 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KC817-25 |
Kexin |
PNP Silicon AF Transistors | |
2 | KC817-16 |
Kexin |
PNP Silicon AF Transistors | |
3 | KC817-16W |
Kexin |
NPN Silicon AF Transistors | |
4 | KC817-40 |
Kexin |
PNP Silicon AF Transistors | |
5 | KC817-40W |
Kexin |
NPN Silicon AF Transistors | |
6 | KC817 |
Guangdong Kexin Industrial |
PNP Silicon AF Transistors | |
7 | KC817A |
Guangdong Kexin Industrial |
NPN Silicon AF Transistors | |
8 | KC817A-16 |
Kexin |
NPN Silicon AF Transistors | |
9 | KC817A-25 |
Kexin |
NPN Silicon AF Transistors | |
10 | KC817A-40 |
Kexin |
NPN Silicon AF Transistors | |
11 | KC817W |
Guangdong Kexin Industrial |
NPN Silicon AF Transistors | |
12 | KC810 |
Tesla Elektronicke |
Transistor |