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SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808(BC808) Features High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Param.
High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristic.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KC808-16 |
Kexin |
PNP Silicon AF Transistors |
|
| 2 | KC808-40 |
Kexin |
PNP Silicon AF Transistors |
|
| 3 | KC808 |
Guangdong Kexin Industrial |
PNP Silicon AF Transistors |
|
| 4 | KC808A |
Guangdong Kexin Industrial |
PNP Silicon AF Transistors |
|
| 5 | KC808A-16 |
Kexin |
PNP Silicon AF Transistors |
|
| 6 | KC808A-25 |
Kexin |
PNP Silicon AF Transistors |
|
| 7 | KC808A-40 |
Kexin |
PNP Silicon AF Transistors |
|
| 8 | KC80 |
Kyocera |
HIGH EFFICIENCY MULTICRYSTAL PHOTOVOLTAIC MODULE |
|
| 9 | KC807 |
Guangdong Kexin Industrial |
PNP Silicon AF Transistors |
|
| 10 | KC807-16 |
Kexin |
PNP Silicon AF Transistors |
|
| 11 | KC807-25 |
Kexin |
PNP Silicon AF Transistors |
|
| 12 | KC807-40 |
Kexin |
PNP Silicon AF Transistors |
|