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for VccQ and VssQ are added. 5. Voltage on any pin relative to VSS for VccQ=1.8V is added in table 2.1. 6. Temperature Under Bias(TBIAS) is deleted. 7. Table 2.3 DC AND OPERATING CHARACTERISTICS is modified. (VccQ=1.8V added) 8. Frequency condition of Capacitance is changed from 1.0Mhz to 100Mhz. 9. Dummy Busy Time for Intelligent Copy-Back Read(tCBSY2) is .
5 1.3 General Description.... 5 1.4 Pin Configuration (52LGA) 6 1.4.1 Package Dimensions .......
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9LCG08U0B |
Samsung |
32Gb B-die NAND Flash |
|
| 2 | K9LCGD8S1M-B |
Samsung |
FLASH MEMORY |
|
| 3 | K9LCGD8U1M-B |
Samsung |
FLASH MEMORY |
|
| 4 | K9LCGD8X1M |
Samsung |
FLASH MEMORY |
|
| 5 | K9L8G08U1A |
Samsung |
Flash Memory |
|
| 6 | K9LAG08U0M |
Samsung Electronics |
Flash Memory |
|
| 7 | K9LAG08U1A |
Samsung |
FLASH MEMORY |
|
| 8 | K9LAG08U1M |
Samsung Electronics |
(K9XXG08UXM) Flash Memory |
|
| 9 | K9LBG08U0D |
Samsung semiconductor |
4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory |
|
| 10 | K9LBG08U0E |
Samsung |
16Gb E-die NAND Flash |
|
| 11 | K9LBG08U0M |
Samsung Electronics |
FLASH MEMORY |
|
| 12 | K9LBG08U1D |
Samsung |
FLASH MEMORY |
|