K9K1G08U0M-YCB0 - Samsung semiconductor

K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory

The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the pa.

Features

and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. ≈ 1µ ≈ 1 K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory Features
• Voltage Supply : 2.7V~3.6V
• Organization - Me.