K9K1216D0C - Samsung semiconductor

K9K1216D0C 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. 1. Changed don’ t care mode in address cycles - *X can be "High" or "Low" => *L must be set to "Low" 2. Explain how pointer operation works in detail. 3. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare ar.

Features

and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY 64M x 8 Bit NAND Flash Memory FEATURES
• Voltage Supply : 2.7V~3.6V
• Organization.