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- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April 10th 1999 July 23th 1999 Sep. 15th 1999 Remark Advanced Information 0.3 Mar. 21th 2000 Preliminary 0.4 May 15th 2000 Preliminary 0.5 July 17th 2000 Final 0.6 1. Changed don’ t care mode in address cycles Nov. 20th 2000 - *X can .
and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
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K9F2808U0A-YCB0, K9F2808U0A-YIB0
16M x 8 Bit NAND Flash Memory
FEATURES
• Voltage Supply : 2.7V~3.6V
• Organization - Memory Cell Array : (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9F2808U0A |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 2 | K9F2808U0A-YCB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 3 | K9F2808U0A-YIB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 4 | K9F2808U0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 5 | K9F2808U0B-D |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 6 | K9F2808U0B-DCB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 7 | K9F2808U0B-DIB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 8 | K9F2808U0B-V |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 9 | K9F2808U0B-VCB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 10 | K9F2808U0B-VIB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 11 | K9F2808U0B-Y |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 12 | K9F2808U0B-YCB0 |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|