K9F1208U0M-YIB0 - Samsung semiconductor

K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page.

Features

• Voltage Supply : 2.7V~3.6V
• Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by four planes
• Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
• 528-Byte Page Read Operation - Random Access : 12µs(Max.) - Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology - Endurance :.