Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised. - "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted. - "WP/ACC Input Leakage Current" is changed to "A9 Input Lea.
...... 5 2.0 GENERAL DESCRIPTION .... 5 3.0 PIN DESCRIPTION . 6 4.0 56TSOP PIN CONFIGURATION ....
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K8P5616UZB |
Samsung semiconductor |
256Mb B-die Page NOR FLASH |
|
| 2 | K8P2716UZC |
Samsung semiconductor |
128Mb C-die Page NOR Flash |
|
| 3 | K8P2815UQC |
Samsung semiconductor |
128Mb C-die NOR FLASH |
|
| 4 | K8006 |
ETC |
BASE UNIT |
|
| 5 | K80E07NE |
Toshiba |
TK80E07NE |
|
| 6 | K80E08K3 |
Toshiba |
TK80E08K3 |
|
| 7 | K810 |
NEC |
N-Channel Silicon Power MOS FET |
|
| 8 | K810A |
Sony |
Sony Ericsson |
|
| 9 | K810I |
Sony |
Sony Ericsson |
|
| 10 | K811 |
NEC |
2SK811 |
|
| 11 | K814P |
Vishay |
Optocoupler |
|
| 12 | K815P |
Vishay |
Optocoupler |
|