The K814P, K824P, K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. FEATURES • Endsta.
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage VISO = 5000 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) of typical 100 %
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Feature phones
• Answering machines
• PBX
• Fax machines
AGENCY APPROVALS
• UL
• cUL
• CQC
ORDERING INFORMATION
K
8
#
4
PART NUMBER
AGENCY CERTIFIED / PACKAGE UL, cUL DIP-4, single channel DIP-8, dual channel DIP-16, quad channel
P
CTR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K824 |
ETC |
2SK824 | |
2 | K821 |
NEC |
2SK821 | |
3 | K822 |
NEC |
N-Channel MOS Field Effect Power Transistor | |
4 | K825 |
NEC |
2SK825 | |
5 | K825P |
Vishay Telefunken |
Optocoupler | |
6 | K827 |
NEC |
2SK827 | |
7 | K827P8 |
Vishay Telefunken |
Optocoupler | |
8 | K827PH |
Vishay Telefunken |
Optocoupler | |
9 | K8006 |
ETC |
BASE UNIT | |
10 | K80E07NE |
Toshiba |
TK80E07NE | |
11 | K80E08K3 |
Toshiba |
TK80E08K3 | |
12 | K810 |
NEC |
N-Channel Silicon Power MOS FET |