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K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 1. Initial draft 0.1 1. Add x32 org and industrial temperature . 0.2 1. Speed bin merge. From K7A1636(32/18)08A to K7A1636(32/18)01A. 2. AC parameter change. tOH(mi.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 2 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 3 | K7A163600A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 4 | K7A163601A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
| 5 | K7A163630B |
SAMSUNG ELECTRONICS |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 6 | K7A163631B |
Samsung semiconductor |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE |
|
| 7 | K7A161800A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 8 | K7A161801A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
| 9 | K7A161830B |
SAMSUNG ELECTRONICS |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 10 | K7A161831B |
Samsung semiconductor |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE |
|
| 11 | K7A201800B |
Samsung semiconductor |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
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| 12 | K7A203200A |
Samsung semiconductor |
64Kx32-Bit Synchronous Pipelined Burst SRAM |
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