............5 2.2 Format....5 2.3 Fields......5 2.4 Example.6 3 Terminology.
• Operating Characteristics
– Voltage range: 1.71 to 3.6 V
– Flash write voltage range: 1.71 to 3.6 V
– Temperature range (ambient): -40 to 105°C
• Performance
– Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
• Memories and memory interfaces
– Up to 512 KB program flash memory on nonFlexMemory devices
– Up to 256 KB program flash memory on FlexMemory devices
– Up to 256 KB FlexNVM on FlexMemory devices
– 4 KB FlexRAM on FlexMemory devices
– Up to 128 KB RAM
– Serial programming interface (EzPort)
– FlexBus external bus interface
• Clocks
– 3 to 32.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K60P100M100SF2 |
Freescale Semiconductor |
Up to 100 MHz ARM Cortex-M4 core | |
2 | K60P104M100SF2 |
Freescale Semiconductor |
K60 Sub-Family | |
3 | K60P121M100SF2 |
Freescale Semiconductor |
K60 Sub-Family | |
4 | K60P144M100SF2 |
Freescale Semiconductor |
K60 Sub-Family | |
5 | K60P144M120SF3 |
NXP |
K60 Sub-Family | |
6 | K60H603 |
Infineon Technologies |
IKW60N60H3 | |
7 | K612 |
NEC |
2SK612 | |
8 | K613 |
Sony |
Silicon N-Channel Junction FET | |
9 | K621 |
Aeroflex |
Silicon Zener Diodes | |
10 | K621 |
Knox Semiconductor Inc |
LOW LEVEL ZENER DIODES SHARP KNEE/ LOW IMPEDANCE | |
11 | K622 |
Hitachi |
2SK622 | |
12 | K625 |
Toshiba |
2SK625 |