SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and dev.
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode www.DataSheet4U.com
• All inputs except data & DM are sampled at the p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4X56163PG-FG |
Samsung semiconductor |
16M x16 Mobile-DDR SDRAM | |
2 | K4X56163PG-LE |
Samsung semiconductor |
16M x16 Mobile-DDR SDRAM | |
3 | K4X56163PG-LG |
Samsung semiconductor |
16M x16 Mobile-DDR SDRAM | |
4 | K4X56163PE |
Samsung semiconductor |
16M x16 Mobile DDR SDRAM | |
5 | K4X56163PE-LFG |
Samsung semiconductor |
16M x16 Mobile DDR SDRAM | |
6 | K4X56163PE-LG |
Samsung semiconductor |
16M x16 Mobile DDR SDRAM | |
7 | K4X56163PI-FE |
Samsung semiconductor |
16Mx16 Mobile DDR SDRAM | |
8 | K4X56163PI-FG |
Samsung semiconductor |
16Mx16 Mobile DDR SDRAM | |
9 | K4X56163PI-LE |
Samsung semiconductor |
16Mx16 Mobile DDR SDRAM | |
10 | K4X56163PI-LG |
Samsung semiconductor |
16Mx16 Mobile DDR SDRAM | |
11 | K4X56323PG |
Samsung semiconductor |
8M x32 Mobile-DDR SDRAM | |
12 | K4X51163PC |
Samsung semiconductor |
32M x16 Mobile-DDR SDRAM |