K4S641632H-UC70 - Samsung semiconductor

K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transacti.

Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb-free Package
• RoHS compliant GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dyn.