The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable bur.
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
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• 64ms refre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4M28323PH |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM | |
2 | K4M281633F |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
3 | K4M281633F-C |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
4 | K4M281633F-F1L |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
5 | K4M281633F-G |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
6 | K4M281633F-L |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
7 | K4M281633F-N |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
8 | K4M281633F-RE |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
9 | K4M28163LF |
Samsung semiconductor |
2M x 16Bit x 4 Banks Mobile SDRAM | |
10 | K4M28163LH |
Samsung semiconductor |
Mobile SDRAM | |
11 | K4M28163PF |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
12 | K4M28163PF-F75 |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |