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method for the same functionality. This means no difference from the previous version. 3.Changed the following AC parameter symbol From. To. Output data access time from CK/CK tDQCK tAC Version 0.61(August 9,1999) - Changed the some values of "write with auto precharge" table for different bank in page 31. Asserted command Old Read Read + AP*1 Legal Legal F.
1.1 Features 1.2 Operating Frequencies 2. Package Pinout & Dimension 2.1 Package Pintout 2.2 Input/Output Function Description 2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension 3. Functional Description 3.1 Simplified State Diagram 3.2 Basic Functionality 3.2.1 Power-Up Sequence 3.2.2 Mode Register Definition 3.2.2.1 Mode Register Set(MRS) 3.2.2.2 Extended Mode Register Set(EMRS) 2 9 10 10 10 11 11 12 13 14 14 15 15 16 16 18 19 19 20 20 20 21 21 22 23 23 24 25 3.2.3 Precharge 3.2.4 No Operation(NOP) & Device Deselect 3.2.5 Row Active 3.2.6 Read Bank 3.2.7 Write Bank 3.3 Essential Fun.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4H511638D-TCA2 |
Samsung |
128Mb DDR SDRAM |
|
| 2 | K4H511638D-TCB0 |
Samsung |
128Mb DDR SDRAM |
|
| 3 | K4H511638D-TLA0 |
Samsung |
128Mb DDR SDRAM |
|
| 4 | K4H511638D-TLA2 |
Samsung |
128Mb DDR SDRAM |
|
| 5 | K4H511638D-TLB0 |
Samsung |
128Mb DDR SDRAM |
|
| 6 | K4H511638D-LA2 |
Samsung semiconductor |
512Mb D-die DDR SDRAM Specification 66 TSOP-II |
|
| 7 | K4H511638D-LB0 |
Samsung semiconductor |
512Mb D-die DDR SDRAM Specification 66 TSOP-II |
|
| 8 | K4H511638D-LB3 |
Samsung semiconductor |
512Mb D-die DDR SDRAM Specification 66 TSOP-II |
|
| 9 | K4H511638D-LCC |
Samsung semiconductor |
512Mb D-die DDR SDRAM Specification 66 TSOP-II |
|
| 10 | K4H511638D |
Samsung semiconductor |
(K4H51xx38D) 512Mb D-die DDR SDRAM Specification |
|
| 11 | K4H511638A-TCA0 |
Samsung |
128Mb DDR SDRAM |
|
| 12 | K4H511638A-TCA2 |
Samsung |
128Mb DDR SDRAM |
|