K3628 - Panasonic

K3628 Silicon N-channel power MOSFET

Power MOSFETs 2SK3628 Silicon N-channel power MOSFET For hihg-speed switching 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gat.

Features

• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance Ron
• No secondary breakdown
■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability
* VDSS VGSS ID IDP EAS 230 ±30 20 80 570 V V A A mJ Power dissipation Ta = 25°C Channel temperature Storage temperature PD 100 3 Tch 150 Tstg −55 to +150 W °C °C Note)
*: L = 2.23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C 16.2±0.5 (3.2) (2.3) Solder Dip 21.0±0.5 15.0±0.2 φ 3..