K3570 - NEC Electronics

K3570 2SK3570

The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 23 nC TYP..

Features

a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES
•4.5V drive available.
•Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Surface mount device available 5 ORDERING INFORMATION PART NUMBER PACKAGE 2SK3570 TO-220AB 2SK3570-S TO-262 2SK3570-ZK 2SK3570-Z TO-263 Note TO-220SMD Note TO-220SMD package is produced only in Japan. ABSOLUTE MAX.