K30N60HS - Infineon

K30N60HS SKW30N60HS

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature .

Features

<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Tj(tl) - 600 41 30 112 112 41 28 112 ±20 ±30 10 250 -55...+150 175 260 Unit V A V µs W °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.2 Sep 08 SKW30N60HS Thermal Resistance Parameter Char.