K2415-Z-VB K2415-Z-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS= 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) 19.8 G D S Drain Connected to Tab FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
APPLICATIONS
• DC/DC Converters
• DC/AC Inverters
• Motor Drives
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.1 mH TC = 25 °C TA = 25 °Cc
VDS
60
V
VGS
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2415 |
NEC |
2SK2415 | |
2 | K241 |
Toshiba |
2SK241 | |
3 | K2411 |
Forward Holdings |
Telephone Tone Ringer | |
4 | K2411 |
NEC |
2SK2411 | |
5 | K2414 |
NEC |
2SK2414 | |
6 | K2417 |
Toshiba Semiconductor |
2SK2417 | |
7 | K240 |
Aeroflex |
Silicon Zener Diodes | |
8 | K240 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
9 | K2400EH70 |
Littelfuse |
High Energy Bidirectional SIDACs | |
10 | K2400G |
JIEJIE |
Sidac | |
11 | K2400G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
12 | K2400GH |
Littelfuse |
High Energy Bidirectional SIDACs |