The basic capacitor construction consists of ceramic dielectric materials et4U.com processed into a tape with a typical thickness range from 0.025 to 0.076 mm. Metal electrode patterns are applied using a thick film screening process. Multiple layers are stacked and laminated in such a manner that electrodes are alternately exposed when the pattern is cut i.
Mono-kapTM series
• Very high capacitance per unit volume
• Low cost.
APPLICATIONS These conformally coated radial leaded capacitors are designed for commercial and industrial applications in four dielectrics, NP0 (ultra-stable), X7R (stable) and Z5U, Y5V (general purpose). Applications include timing, coupling/decoupling, signal comparison and biasing. Mono-kap™ capacitors are suitable for automatic insertion equipment. DESCRIPTION
The basic capacitor construction consists of ceramic dielectric materials et4U.com processed into a tape with a typical thickness range from 0.025 to 0.076 mm. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K223K15X7RF5UH5 |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors | |
2 | K223K20X7Rxxxx |
Vishay Intertechnology |
(K223xxxx) Leaded Ceramic Multilayer Capacitors | |
3 | K223 |
Sanyo |
2SK223 | |
4 | K2230 |
Toshiba |
Silicon N-Channel MOSFET | |
5 | K2231 |
Toshiba Semiconductor |
2SK2231 | |
6 | K2232 |
Toshiba Semiconductor |
2SK2232 | |
7 | K2233 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | K2234 |
NEC |
2SK2234 | |
9 | K2237 |
Toshiba Semiconductor |
2SK2237 | |
10 | K2200 |
Toshiba Semiconductor |
2SK2200 | |
11 | K2200EH70 |
Littelfuse |
High Energy Bidirectional SIDACs | |
12 | K2200G |
JIEJIE |
Sidac |