The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 (MP-45F) Pa.
• Low On-Resistance
15.0±0.3
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current
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* Single Avalanche Energy
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* PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 ± 30 ± 5.0 ± 20 35 2.0 150 5.0 8.3 V V A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2131 |
NEC |
2SK2131 | |
2 | K2132 |
NEC |
2SK2132 | |
3 | K2134 |
NEC |
2SK2134 | |
4 | K2135 |
NEC |
2SK2135 | |
5 | K2136 |
NEC |
2SK2136 | |
6 | K2137 |
NEC |
2SK2137 | |
7 | K2138 |
Renesas |
N-Channel Power MOSFET | |
8 | K210 |
Aeroflex |
Silicon Zener Diodes | |
9 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
10 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
11 | K210 |
Toshiba Semiconductor |
2SK210 | |
12 | K2101 |
Fuji Electric |
2SK2101 |