K1946-01MR-VB K1946-01MR-VB Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.010 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)a 70 55 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: www.VBsemi.com TO-220 FULLPAK D GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T.
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
www.VBsemi.com
TO-220 FULLPAK
D
GDS
Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
70 50a
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1941 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | K1943-01 |
Fuji Electric |
N-channel MOS-FET | |
3 | K1947ZC400 |
IXYS |
Medium Voltage Thyristor | |
4 | K1947ZC420 |
IXYS |
Medium Voltage Thyristor | |
5 | K1947ZC440 |
IXYS |
Medium Voltage Thyristor | |
6 | K1947ZD400 |
IXYS |
Medium Voltage Thyristor | |
7 | K1947ZD420 |
IXYS |
Medium Voltage Thyristor | |
8 | K1947ZD440 |
IXYS |
Medium Voltage Thyristor | |
9 | K1904 |
Sanyo Semiconductor Corporation |
2SK1904 | |
10 | K1908 |
Sanyo Semicon Device |
2SK1908 | |
11 | K1917 |
Fuji Electric |
2SK1917 | |
12 | K1918 |
Hitachi |
Silicon N-Channel MOSFET |