Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute M.
q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS
*
800 ±30 ±3 ±6 20
Allowable power dissipation
TC = 25°C Ta = 25°C PD
40 1.3
Channel temperature Storage temperature
T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K184 |
Toshiba Semiconductor |
2SK184 | |
2 | K1840 |
Sanyo |
2SK1840 | |
3 | K1841 |
Sanyo |
2SK1841 | |
4 | K1847 |
Sanyo |
2SK1847 | |
5 | K1848 |
Sanyo |
2SK1848 | |
6 | K1849 |
Sanyo |
2SK1849 | |
7 | K180 |
Aeroflex |
Silicon Zener Diodes | |
8 | K180 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
9 | K1800G |
JIEJIE |
Sidac | |
10 | K1800G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
11 | K1800S |
JIEJIE |
Sidac | |
12 | K1800y |
Littelfuse |
Thyristors |